通过采用最先进的沟槽栅工艺技术和完美的结构设计,DT MOSFET实现了功率密度最大化,从而大幅度降低电流传导过程中的导通功率损耗。同时,电流在芯片元胞当中的流通会更加均匀稳定,其有效降低了栅极电荷(Qg),尤其是栅极漏极间的电荷(Qgd),从而在快速开关过程中降低开关功率损耗。通过采用这些先进的技术手段,DT MOSFET的FOM(Qg*Rdson)得以实现行业内的领先水平。

产品特点:

  • 低FOM(Rdson*Qg)
  • 高可靠性
  • 具有低的栅电荷

应用范围:

  • 不间断电源,逆变器
  • 交流/直流电源的同步整流
  • 电机驱动
产品V(BR)DSS(V)ID(A)RDS(ON)(mΩ max)*at VGS=(10V)RDS(ON)(mΩ max)*at VGS=(4.5V)V(GS)th-min(V)V(GS)th-max(V)Ciss(pF)Qg(nC)Package
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